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9 May 2018 Optical manipulation of current confinement in VCSELs with an external laser beam
Sven Bader, Mohamed Elattar, Philipp Gerlach, Rainer Michalzik
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Proceedings Volume 10682, Semiconductor Lasers and Laser Dynamics VIII; 1068218 (2018) https://doi.org/10.1117/12.2306239
Event: SPIE Photonics Europe, 2018, Strasbourg, France
Abstract
We have devised an oxide- and regrowth-free approach for current confinement in vertical-cavity surface-emitting lasers (VCSELs) which uses the photons in the cavity to optically define a current path through the device. For this purpose, an optical switch, implemented as a phototransistor (PT), is epitaxially integrated into the cavity. The PT layers become locally conductive where the highest photon density is reached in the resonator and establish the current aperture. By introducing additional photons with an external laser beam into the resonator, we show here that this current aperture can be manipulated. We demonstrate the possibility of redefining the location of the current aperture and discuss the consequences on the light-current characteristics of the devices.
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Sven Bader, Mohamed Elattar, Philipp Gerlach, and Rainer Michalzik "Optical manipulation of current confinement in VCSELs with an external laser beam", Proc. SPIE 10682, Semiconductor Lasers and Laser Dynamics VIII, 1068218 (9 May 2018); https://doi.org/10.1117/12.2306239
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KEYWORDS
Photons
Vertical cavity surface emitting lasers
Absorption
Optical manipulation
Phototransistors
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