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17 May 2018 Structure and optical properties of PECVD-prepared As-Se-Te chalcogenide films designed for the IR optical applications
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Abstract
For the first time films of the As-Se-Te (15≤As≤40, 30≤Se≤65, 5≤Te≤30) chalcogenide system have been prepared by Plasma-Enhanced Chemical Vapor Deposition (PECVD) at low pressure (0.1 Torr). RF (40 MHz) inductively coupled non-equilibrium plasma discharge has been chosen as the initiator of chemical interaction between precursors. Elemental As, Se, and Te of high-purity were used as the initial substances. High-pure argon was utilized as career gas as plasma feed gas. The obtained chalcogenide planar materials have been studied in terms their physical-chemical properties. The films were modified by continuous and femtosecond laser irradiation.
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Aleksey Nezhdanov, Leonid Mochalov, Dmitry Usanov, Mikhail Kudryashov, Alexandr Logunov, Andrey Stepanov, Aleksey Murzanev, Alexey Korytin, Alexander Romashkin, Dominik Dorosz, and Aleksandr Mashin "Structure and optical properties of PECVD-prepared As-Se-Te chalcogenide films designed for the IR optical applications", Proc. SPIE 10683, Fiber Lasers and Glass Photonics: Materials through Applications, 106833K (17 May 2018); https://doi.org/10.1117/12.2314763
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