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14 May 2018 Features of nonlinear absorption of Bi2-xSbxTe3-ySey films
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Abstract
The monocrystalline Bi2Te3-xSex and Bi2-xSbxTe3-ySey films of various compositions and thickness were synthesized by MOCVD on sapphire substrates1 . The transmission of laser pulses (duration τ≈35 ps, wavelength λ=1064 nm) through the films was measured as a function of radiation intensity with the aim to optimize functionality of these films deposited on different substrates as saturable absorbers for the application in passively mode-locked 1-2 μm wavelength lasers. There was investigated nonlinear absorption of films of various compositions and thickness with measured saturation intensity ≈ 20 MW/cm2 for Bi2Te3-xSex and 45 MW/cm2 for Bi2-xSbxTe3-ySey. Data obtained can be explained by the classical nonlinearity – phase space filling in a quantum well2 . As it was established earlier3 , the semiconductor conductivity type of the film without light interaction can be changed to the metallic conductivity type in the case of light interaction with the film, that is strongly nonlinear depends on the light intensity. At the same time, with a metallic conductivity type, the film becomes vulnerable for high light intensity.
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A. M. Smirnov, I. D. Laktaev, P. I. Kuznetsov, and K. M. Golant "Features of nonlinear absorption of Bi2-xSbxTe3-ySey films", Proc. SPIE 10684, Nonlinear Optics and its Applications 2018, 106842K (14 May 2018); https://doi.org/10.1117/12.2322135
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