Testing system of multiplying electron gain for electron bombarded semiconductor

Jiqiang Zhou; Haibo Fan; Hongcang Cheng; Yining Mu; De Song

doi:10.1117/12.2309747

20 February 2018 Testing system of multiplying electron gain for electron bombarded semiconductor

Jiqiang Zhou, Haibo Fan, Hongcang Cheng, Yining Mu, De Song

Proceedings Volume 10697, Fourth Seminar on Novel Optoelectronic Detection Technology and Application; 106970T (2018) https://doi.org/10.1117/12.2309747
Event: Fourth Seminar on Novel Optoelectronic Detection Technology and Application, 2017, Nanjing, China

Abstract

Electron bombardment of semiconductor gain as the main characteristics of electronic bombardment devices affect the overall performance of the device. According to weak signal detection theory, developed a set of multiplying electron gain test system including pre-amplifier circuit and FPGA-based high-speed signal acquisition system. The tinned semiconductor sample was tested experimentally, for the relationship between gain performance and incident electron energy. The experimental with incident electron energy(1500-2000eV) bombardment 65μm of semiconductor sample, results show the multiply electron gain with the increase of the incident electron energy, which will provide theoretical basis and technical support to further manufacture of high performance electron bombarded semiconductor sensors.

Citation Download Citation

Jiqiang Zhou, Haibo Fan, Hongcang Cheng, Yining Mu, and De Song "Testing system of multiplying electron gain for electron bombarded semiconductor", Proc. SPIE 10697, Fourth Seminar on Novel Optoelectronic Detection Technology and Application, 106970T (20 February 2018); https://doi.org/10.1117/12.2309747

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