Total ionizing dose effect and damage mechanism on saturation output voltage of charge coupled device

Lin Wen; Yu-dong Li; Qi Guo; Chao-min Wang

doi:10.1117/12.2314815

20 February 2018 Total ionizing dose effect and damage mechanism on saturation output voltage of charge coupled device

Lin Wen, Yu-dong Li, Qi Guo, Chao-min Wang

Author Affiliations +

Proceedings Volume 10697, Fourth Seminar on Novel Optoelectronic Detection Technology and Application; 106971J (2018) https://doi.org/10.1117/12.2314815
Event: Fourth Seminar on Novel Optoelectronic Detection Technology and Application, 2017, Nanjing, China

Abstract

Total ionizing dose effect is a major threat to space applications of CCD, which leads to the decrease of CCD saturation output voltage and the increase of dark signal. This paper investigated CCD and its readout circuit for experimental samples of different channel width to length ratio of MOSFET, and readout circuit amplifier, and CCD. The irradiation source was 60Co- gamma ray. through testing the parameters degradation of MOSFET and amplifier degradation, the generation and annealing law of irradiation induced defects in MOS single tube are analyzed. Combined with the radiation effect of amplifier and CCD, The correlation of radiation damage of the MOSFET and the readout circuit amplifier and CCD parameter degradation is established. Finally, this paper reveals the physical mechanism of ionizing radiation damage of the readout circuit. The research results provide a scientific basis for the selection of anti-radiation technology and structure optimization of domestic CCD.

Citation Download Citation

Lin Wen, Yu-dong Li, Qi Guo, and Chao-min Wang "Total ionizing dose effect and damage mechanism on saturation output voltage of charge coupled device", Proc. SPIE 10697, Fourth Seminar on Novel Optoelectronic Detection Technology and Application, 106971J (20 February 2018); https://doi.org/10.1117/12.2314815

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