Presentation
10 July 2018 A comparison of proton damage effects on P- and N-Channel CCDs I: performance following cryogenic irradiation (Conference Presentation)
Nathan L. Bush, Ben Dryer, Anton Lindley De-Caire, Ross Burgon, Andrew Holland
Author Affiliations +
Abstract
P-Channel CCDs may offer improved tolerance of radiation damage compared to the N-Channel equivalent due to favorable differences in the population of silicon defects that impact charge transfer performance following irradiation. The technology may therefore be attractive for applications within harsh radiation environments, yet requires further validation against existing N-Channel technology to better understand the regime where performance benefits can be expected. In this study, a P- and N-Channel CCD204, manufactured by Teledyne-e2v, were irradiated simultaneously biased and under cryogenic conditions. Following irradiation, the devices were tested for charge transfer performance at multiple temperatures and clocking speeds consistent with large-scale space missions. Silicon defects were also probed within each device using the “trap pumping” technique across the parameter space relevant for optimization of charge transfer. Performance differences between each device are presented and linked to the relevant silicon defects identified through trap pumping. We conclude with an outlook on future results that include the impact of both a room temperature (298 K) and high temperature (373 K) anneal on the performance of each device.
Conference Presentation
© (2018) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Nathan L. Bush, Ben Dryer, Anton Lindley De-Caire, Ross Burgon, and Andrew Holland "A comparison of proton damage effects on P- and N-Channel CCDs I: performance following cryogenic irradiation (Conference Presentation)", Proc. SPIE 10709, High Energy, Optical, and Infrared Detectors for Astronomy VIII, 107090M (10 July 2018); https://doi.org/10.1117/12.2313447
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CITATIONS
Cited by 3 scholarly publications.
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KEYWORDS
Charge-coupled devices

Cryogenics

Silicon

Manufacturing

Space operations

Tolerancing

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