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23 May 1989 Characteristics Of 1/f Noise Of The Buried-Channel Charge-Coupled Device (CCD)
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Low frequency noise with power spectra of the form 1/f' has been investigated for an n-buried channel CCD by measuring the drain-to-source noise voltage. When VG = 0 to -1 V, the device is in the surface-channel mode and the power spectra of the noise exhibits 'y = 1. As the gate voltage decreases, the noise for f < 50 Hz increases and eventually peaks at VG = -2.6 V before it decreases as the device moves into the buried-channel operation. On the other hand, the noise for f > 50 Hz peaks twice at VG = -2 and -3 V. Between the two peaks, there occurs a dip at VG = -2.4 V where -y takes a maximum value of 1.7. The preliminary results indicate that the noise is primarily due to tunneling of electrons at the silicon-silicon dioxide interface to traps located inside the oxide. The traps farther from the interface affect the noise for f < 50 Hz whereas those nearer to the interface influence the noise for f > 50 Hz.
© (1989) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
H Kim and D L Heidtmann "Characteristics Of 1/f Noise Of The Buried-Channel Charge-Coupled Device (CCD)", Proc. SPIE 1071, Optical Sensors and Electronic Photography, (23 May 1989);


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