ZnO ultraviolet photodetector based metal-semiconductor-metal structure

Yuhan Duan; Mingyu Cong; Dayong Jiang; Zexuan Guo; Xuan Zhou; Nan Hu; Kun Yu

doi:10.1117/12.2317793

5 March 2018 ZnO ultraviolet photodetector based metal-semiconductor-metal structure

Yuhan Duan, Mingyu Cong, Dayong Jiang, Zexuan Guo, Xuan Zhou, Nan Hu, Kun Yu

Proceedings Volume 10710, Young Scientists Forum 2017; 107100X (2018) https://doi.org/10.1117/12.2317793
Event: Young Scientists Forum 2017, 2017, Shanghai, China

Abstract

The metal-semiconductor-metal (MSM) structured ZnO photodetectors with same electrode spacings are made by radio frequency magnetron sputtering. A study of the thermal annealing effects on photodetectors with sequential annealing temperature (300, 400, 500 and 600 ℃).The responsivity of the photodetector was enlarged greatly after annealing the MSM device. Meanwhile, the enhancement in the dark current that resulted from the experiment was accompanied by the increasing annealing temperature. These results demonstrate that a simple route to improve the responsivities of photodetectors can be realized easily by annealing the devices.

Citation Download Citation

Yuhan Duan, Mingyu Cong, Dayong Jiang, Zexuan Guo, Xuan Zhou, Nan Hu, and Kun Yu "ZnO ultraviolet photodetector based metal-semiconductor-metal structure", Proc. SPIE 10710, Young Scientists Forum 2017, 107100X (5 March 2018); https://doi.org/10.1117/12.2317793

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