CONFERENCE PROCEEDINGS
Advanced Search
Home > Proceedings > Volume 10721 > Article
Presentation
17 September 2018 Reflectance modulation from a metasurface coupled to intersubband transitions in semiconductor quantum wells using quantum tunneling (Conference Presentation)
Raktim Sarma, Salvatore Campione, Michael Goldflam, Loan Le, M. Lange, Joshua Shank, Michael Wanke, Jinhyun Noh, Peide Ye, Isaac Ruiz, Stephen Howell, Michael Sinclair, Joel Wendt, Igal Brener
Author Affiliations +
Proceedings Volume 10721, Active Photonic Platforms X; 1072123 (2018) https://doi.org/10.1117/12.2321900
Event: SPIE Nanoscience + Engineering, 2018, San Diego, California, United States
Abstract
Coupling of metasurfaces to intersubband transitions (ISTs) in semiconductor quantum wells (QWs) has been extensively studied for various applications ranging from generating giant nonlinear optical response to designing tunable metasurfaces for applications such as ultrafast spatial optical modulators and voltage tunable filters. In this work, we experimentally demonstrate a fundamentally new approach of actively controlling the coupling of ISTs in QWs to a metasurface for voltage tuning its optical response. Unlike previous approaches, we use voltage-controlled quantum tunneling to control the carrier concentration in the QWs for turning on/off the ISTs. We design a multi-quantum well structure consisting of four undoped InGaAs wells with AlInAs barriers grown on top of a highly doped InGaAs layer that acts as an electron reservoir. The heterostructure is optimized such that the first IST in all the wells is at 11µm. A complementary gold metasurface with dipole resonances at 11µm is fabricated on top of the QW structure. We designed the heterostructure such that by applying a bias of 1V, the energy bands of all the QWs get aligned simultaneously, leading to the occupation of the ground state of all the QWs via quantum tunneling of the electrons from the electron reservoir. The ISTs which were turned off due to negligible electron density gets turned on at 1V, and this leads to coupling between the ISTs and the dipoles resonances of the metasurface. The voltage induced coupling leads to reflectance modulation which we confirmed experimentally by rapid scan double modulation FTIR measurements.
Conference Presentation
© (2018) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Citation Download Citation
Raktim Sarma, Salvatore Campione, Michael Goldflam, Loan Le, M. Lange, Joshua Shank, Michael Wanke, Jinhyun Noh, Peide Ye, Isaac Ruiz, Stephen Howell, Michael Sinclair, Joel Wendt, and Igal Brener "Reflectance modulation from a metasurface coupled to intersubband transitions in semiconductor quantum wells using quantum tunneling (Conference Presentation)", Proc. SPIE 10721, Active Photonic Platforms X, 1072123 (17 September 2018); https://doi.org/10.1117/12.2321900
ACCESS THE FULL ARTICLE
ORGANIZATIONAL
Sign in with credentials provided by your organization.
INSTITUTIONAL
Select your institution to access the SPIE Digital Library.
SELECT YOUR INSTITUTION
PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.
PERSONAL SIGN IN
No SPIE Account? Create one
PURCHASE THIS CONTENT
SUBSCRIBE TO DIGITAL LIBRARY
50 downloads per 1-year subscription
Members: $195
Non-members: $335 ADD TO CART
25 downloads per 1 - year subscription
Members: $145
Non-members: $250 ADD TO CART
PURCHASE SINGLE ARTICLE
Includes PDF, HTML & Video, when available
Members: $17.00
Non-members: $21.00 ADD TO CART
PROCEEDINGS
 PRESENTATION
WATCH
PRESENTATION SAVE TO MY LIBRARY
GET CITATION
Advertisement
Advertisement
KEYWORDS
Quantum wells
Modulation
Reflectivity
Semiconductors
Heterojunctions
Indium gallium arsenide
Optical design
RELATED CONTENT
Subscribe to Digital Library
Receive Erratum Email Alert
Back to Top