Quantum dots enhanced UV response of silicon photodetectors for broadband light detection (Conference Presentation)

Haizheng Zhong; Mengjiao Zhang; Lingxue Wang; Linghai Meng; Xian-gang Wu; Qinwen Tan; Yuanjin Chen; Feng Jiang; Yi Cai

doi:10.1117/12.2320069

11 October 2018 Quantum dots enhanced UV response of silicon photodetectors for broadband light detection (Conference Presentation)

Haizheng Zhong, Mengjiao Zhang, Lingxue Wang, Linghai Meng, Xian-gang Wu, Qinwen Tan, Yuanjin Chen, Feng Jiang, Yi Cai

Author Affiliations +

Proceedings Volume 10804, Advanced Manufacturing Technologies for Micro- and Nanosystems in Security and Defence; 108040H (2018) https://doi.org/10.1117/12.2320069
Event: SPIE Security + Defence, 2018, Berlin, Germany

Abstract

Quantum dots have been considerred to be suitable candidates for down-shifting applications. The integration of quantum dots with Si photodetector provide low cost method to extend the reponse in the UV region. However, the lack of suitable processing technique reduce the reposne in visible region. In this work, we firstly report the integration of in-situ fabricated perovskite quantum dots embedded composite films (PQDCF) as down-shifting materials for enhancing the ultraviolet (UV) response of silicon (Si) photodetectors toward broadband and solar-blind light detection. External quantum efficiency measurements show that the UV response of PQDCF coated Si photodiodes greatly improved from near 0% to at most of 50.6±0.5% @ 290 nm. As compared to the calculated maximum value of 87%, the light coupling efficiency of the integrated device is determined to be 80%@395 nm, suggesting an efficient down-shifting process. Furthermore, PQDCF was also successfully adapted for electron multiplying charge coupled device (EMCCD) based image sensor. The PQDCF coated EMCCD shows linear response with high-resolution imaging under illumination at 360 nm, 620 nm and 960 nm, implying the ability of broadband light detection in the UV, visible (VIS) and near infrared (NIR) region. Furthermore, a solar-blind UV detection was demonstrated by integrating a solar-blind UV filter with PQDCF coated EMCCD. In all, the use of PQDCF as luminescent down-shifting materials provides an effective and low-cost way to improve the UV response of Si photodetectors.

Conference Presentation

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Haizheng Zhong, Mengjiao Zhang, Lingxue Wang, Linghai Meng, Xian-gang Wu, Qinwen Tan, Yuanjin Chen, Feng Jiang, and Yi Cai "Quantum dots enhanced UV response of silicon photodetectors for broadband light detection (Conference Presentation)", Proc. SPIE 10804, Advanced Manufacturing Technologies for Micro- and Nanosystems in Security and Defence, 108040H (11 October 2018); https://doi.org/10.1117/12.2320069

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KEYWORDS

Ultraviolet radiation

Silicon

Photodetectors

Quantum dots

Electron multiplying charge coupled devices

Near infrared

Ultraviolet detectors

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