Translator Disclaimer
Paper
1 October 2018 Development of the construction sketch of N-channel MOS-phototransistor with bilateral illumination of channel and operation card of its making
Author Affiliations +
Proceedings Volume 10808, Photonics Applications in Astronomy, Communications, Industry, and High-Energy Physics Experiments 2018; 108080R (2018) https://doi.org/10.1117/12.2501552
Event: Photonics Applications in Astronomy, Communications, Industry, and High-Energy Physics Experiments 2018, 2018, Wilga, Poland
Abstract
In the article the physical mechanism of optical radiation co-operation with semiconductor devices, technological route of making of MOS - phototransistor with bilateral illumination of channel has been considered. Also the optical transducer with frequency output based on the structure of the bipolar-field transistors with negative resistance and MOSFET with bilateral illumination of channel that is a photosensitive element has been considered. A mathematical model of the radio measuring optical transducer has been developed.
© (2018) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Alexander V. Osadchuk, Vladimir S. Osadchuk, Olena M. Zhahlovska, Saule Luganskaya, and Andrzej Kociubiński "Development of the construction sketch of N-channel MOS-phototransistor with bilateral illumination of channel and operation card of its making", Proc. SPIE 10808, Photonics Applications in Astronomy, Communications, Industry, and High-Energy Physics Experiments 2018, 108080R (1 October 2018); https://doi.org/10.1117/12.2501552
PROCEEDINGS
16 PAGES


SHARE
Advertisement
Advertisement
Back to Top