Development of the construction sketch of N-channel MOS-phototransistor with bilateral illumination of channel and operation card of its making

Alexander V. Osadchuk; Vladimir S. Osadchuk; Olena M. Zhahlovska; Saule Luganskaya; Andrzej Kociubiński

doi:10.1117/12.2501552

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1 October 2018 Development of the construction sketch of N-channel MOS-phototransistor with bilateral illumination of channel and operation card of its making

Alexander V. Osadchuk, Vladimir S. Osadchuk, Olena M. Zhahlovska, Saule Luganskaya, Andrzej Kociubiński

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Proceedings Volume 10808, Photonics Applications in Astronomy, Communications, Industry, and High-Energy Physics Experiments 2018; 108080R (2018) https://doi.org/10.1117/12.2501552
Event: Photonics Applications in Astronomy, Communications, Industry, and High-Energy Physics Experiments 2018, 2018, Wilga, Poland

Abstract

In the article the physical mechanism of optical radiation co-operation with semiconductor devices, technological route of making of MOS - phototransistor with bilateral illumination of channel has been considered. Also the optical transducer with frequency output based on the structure of the bipolar-field transistors with negative resistance and MOSFET with bilateral illumination of channel that is a photosensitive element has been considered. A mathematical model of the radio measuring optical transducer has been developed.

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Alexander V. Osadchuk, Vladimir S. Osadchuk, Olena M. Zhahlovska, Saule Luganskaya, and Andrzej Kociubiński "Development of the construction sketch of N-channel MOS-phototransistor with bilateral illumination of channel and operation card of its making", Proc. SPIE 10808, Photonics Applications in Astronomy, Communications, Industry, and High-Energy Physics Experiments 2018, 108080R (1 October 2018); https://doi.org/10.1117/12.2501552

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