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3 October 2018 Non‐Gaussian CD distribution characterization for DRAM application in EUV lithography
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Abstract
We evaluate through simulations and experimental data the impact of process non-idealities with a particular attention to mask CD uniformity for 44 nm pitch DRAM contact hole array. Several millions of contact holes are simulated with PROLITH after full-physical stochastic process calibration. Process Windows, LCDU and failure rates are compared at nominal conditions, assuming no variation in process parameters vs. the stochastic process variation obtained by inclusion of perturbations of process parameters. The simulations are repeated including Gaussian distributed mask CD variations. Skewness, kurtosis, and failure rates are calculated..
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© (2018) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Alessandro Vaglio Pret, Inhwan Lee, Mijung Lim, David Blankenship, Trey Graves, Stewart A. Robertson, and John J. Biafore "Non‐Gaussian CD distribution characterization for DRAM application in EUV lithography", Proc. SPIE 10809, International Conference on Extreme Ultraviolet Lithography 2018, 108090A (3 October 2018); https://doi.org/10.1117/12.2501820
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