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12 October 2018 High-NA EUV lithography exposure tool progress (Conference Presentation)
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While EUV systems equipped with a 0.33 Numerical Aperture (NA) lens are readying to start high volume manufacturing, ASML and Zeiss are in parallel ramping up their activities on an EUV exposure tool with an NA of 0.55. The purpose of this high-NA scanner, targeting an ultimate resolution of 8nm, is to extend Moore’s law throughout the next decade. A novel lens design, capable of providing the required Numerical Aperture, has been identified; this lens will be paired with new, faster stages and more accurate sensors enabling the tight focus and overlay control needed for future process nodes. In this paper an update will be given on the status of the developments at Carl Zeiss and ASML. Next to this, we will address several topics inherent in the new design and smaller target resolution: M3D effects, polarization, focus control and stitching.
Conference Presentation
© (2018) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jan van Schoot, Eelco van Setten, Kars Troost, Frank Bornebroek, Rob van Ballegoij, Sjoerd Lok, Judon Stoeldraijer, Jo Finders, Hans Meiling, Paul Graeupner, Peter Kuerz, Winfried Kaiser, Erik Loopstra, Bernhard Kneer, and Sascha Migura "High-NA EUV lithography exposure tool progress (Conference Presentation)", Proc. SPIE 10809, International Conference on Extreme Ultraviolet Lithography 2018, 108090Z (12 October 2018);


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