Benchmarking of EUV lithography line/space patterning versus immersion lithography multipatterning schemes at equivalent pitch

Angélique Raley; Chris Mack; Sophie Thibaut; Eric Liu; Akiteru Ko

doi:10.1117/12.2501680

25 November 2018 Benchmarking of EUV lithography line/space patterning versus immersion lithography multipatterning schemes at equivalent pitch

Angélique Raley, Chris Mack, Sophie Thibaut, Eric Liu, Akiteru Ko

Author Affiliations +

Proceedings Volume 10809, International Conference on Extreme Ultraviolet Lithography 2018; 1080915 (2018) https://doi.org/10.1117/12.2501680
Event: SPIE Photomask Technology + Extreme Ultraviolet Lithography, 2018, Monterey, California, United States

Abstract

In this paper, the authors compare and contrast the line/space patterning performance of direct print EUV to multipatterning schemes at equivalent pitch using a systematic unbiased PSD analysis approach for the 7nm and 5nm logic node critical BEOL layers. The authors highlight where innovation is needed to move forward with EUV in terms of line edge roughness (LER), line width roughness (LWR) performance.

Citation Download Citation

Angélique Raley, Chris Mack, Sophie Thibaut, Eric Liu, and Akiteru Ko "Benchmarking of EUV lithography line/space patterning versus immersion lithography multipatterning schemes at equivalent pitch", Proc. SPIE 10809, International Conference on Extreme Ultraviolet Lithography 2018, 1080915 (25 November 2018); https://doi.org/10.1117/12.2501680

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