Studying resist performance for contact holes printing using EUV interference lithography

Xiaolong Wang; Li-Ting Tseng; Dimitrios Kazazis; Zuhal Tasdemir; Michaela Vockenhuber; Iacopo Mochi; Yasin Ekinci

doi:10.1117/12.2501949

12 October 2018 Studying resist performance for contact holes printing using EUV interference lithography

Xiaolong Wang, Li-Ting Tseng, Dimitrios Kazazis, Zuhal Tasdemir , Michaela Vockenhuber, Iacopo Mochi, Yasin Ekinci

Proceedings Volume 10809, International Conference on Extreme Ultraviolet Lithography 2018; 108091Z (2018) https://doi.org/10.1117/12.2501949
Event: SPIE Photomask Technology + Extreme Ultraviolet Lithography, 2018, Monterey, California, United States

Abstract

Extreme ultraviolet interference lithography (EUV-IL) is relatively simple and inexpensive technique that can pattern high resolution line/space and has been successfully used for the resist performance testing. While the aerial image in EUV-IL formed by two beams is straightforward to understand and has contrast of 1, the aerial image formed by four beams providing contact holes (CHs) is rather complicated. The phases of the interfering beams as well as by the polarization play big roles in the image of the interference pattern and its contrast. To understand thoroughly the formation of CH, we investigate theoretically polarization effect on the aerial image generated with two and four-beam interference. We show the coherent four-beam interference provides the highest contrast (1) with zero initial phase. But the interference pattern strongly depends on the phase difference and switch from one to another when the phase difference between the two pairs of gratings is π/2. Consequently, the contrast also decreases and interference pattern could end with random form when the relative phase of the beams cannot be fully controlled. We propose an incoherent four-beam interference model by intentionally designing the grating with a slightly different pitch to create an optical path difference that is longer than the coherence length of the EUV light (13.5 nm). We also discuss the polarization-induced contrast loss. We verify our analytical model by printing both positive tone chemically amplified resist (CAR) and a negative tone inorganic resist.

Citation Download Citation

Xiaolong Wang, Li-Ting Tseng, Dimitrios Kazazis, Zuhal Tasdemir , Michaela Vockenhuber, Iacopo Mochi, and Yasin Ekinci "Studying resist performance for contact holes printing using EUV interference lithography", Proc. SPIE 10809, International Conference on Extreme Ultraviolet Lithography 2018, 108091Z (12 October 2018); https://doi.org/10.1117/12.2501949

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KEYWORDS

Polarization

Photomasks

Extreme ultraviolet

Diffraction gratings

Lithography

Diffraction

Semiconducting wafers

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