E-beam based EUV mask characterization for studying mask induced wafer effects

Vidya Vaenkatesan; Qing Tian; Emily Gallagher; Jim Wiley; Jo Finders; Michael Kubis; Jan Mulkens; Chiyan Kuan; Kevin Gao

doi:10.1117/12.2502588

18 October 2018 E-beam based EUV mask characterization for studying mask induced wafer effects

Vidya Vaenkatesan, Qing Tian, Emily Gallagher, Jim Wiley, Jo Finders, Michael Kubis, Jan Mulkens, Chiyan Kuan, Kevin Gao

Author Affiliations +

Proceedings Volume 10810, Photomask Technology 2018; 108100U (2018) https://doi.org/10.1117/12.2502588
Event: SPIE Photomask Technology + Extreme Ultraviolet Lithography, 2018, Monterey, California, United States

Abstract

The mask is a known contributor to intra-field and local patterning fingerprints at the wafer level. Traditionally, a 3σ distribution of critical dimensions (CDs) on mask was sufficient to characterize the contribution to the CD distribution at wafer level. However, as edge placement error (EPE) and EUV wafer patterning stochastics become critical with decreasing feature sizes, wafer CD distributions are being characterized for statistics beyond 3σ. Additionally, Local Placement Error (LPE) is a critical metric that is expected to contribute to EPE. Consequently, it is imperative to understand, characterize and control the EUV mask contributors to the EPE budget. This work is an attempt to extensively characterize the CD and LPE distribution on an EUV mask and identify its impact at wafer level.

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Citation Download Citation

Vidya Vaenkatesan, Qing Tian, Emily Gallagher, Jim Wiley, Jo Finders, Michael Kubis, Jan Mulkens, Chiyan Kuan, and Kevin Gao "E-beam based EUV mask characterization for studying mask induced wafer effects", Proc. SPIE 10810, Photomask Technology 2018, 108100U (18 October 2018); https://doi.org/10.1117/12.2502588

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