PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.
One of the challenges of actinic metrology tools for EUV lithography is the availability of light sources with high brightness, stability, and availability. In particular, actinic patterned mask inspection on EUV reticles is considered an essential tool for the EUV lithography ecosystem and it requires an EUV source of high brightness. We present the design of a compact and accelerator-based light source producing EUV radiation with high-brightness for actinic metrology applications in the semiconductor industry. Our design is based on the well-established components and design principles. The specifications required for actinic mask inspection is achieved using a short period undulator and 430 MeV electron energy. The concentric design of storage and booster rings enables stable operation with a relatively small footprint. This study shows the commercial viability of a compact and high-brightness EUV source with high stability and reliability and demonstrates its feasibility for actinic metrology applications.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.
The alert did not successfully save. Please try again later.
Yasin Ekinci, Terence Garvey, Andreas Streun, Albin Wrulich, Leonid Rivkin, "A high-brightness accelerator-based EUV source for metrology applications," Proc. SPIE 10810, Photomask Technology 2018, 108100W (8 October 2018); https://doi.org/10.1117/12.2501930