2D SRAF rule extraction for fast application based on model-based results

Yaoxuan Dai; Xiaojing Su; Pengzheng Gao; Yayi Wei; Yanrong Wang; Jing Zhang; Jiang Yan

doi:10.1117/12.2501455

3 October 2018 2D SRAF rule extraction for fast application based on model-based results

Yaoxuan Dai, Xiaojing Su, Pengzheng Gao, Yayi Wei, Yanrong Wang, Jing Zhang, Jiang Yan

Author Affiliations +

Proceedings Volume 10810, Photomask Technology 2018; 108101E (2018) https://doi.org/10.1117/12.2501455
Event: SPIE Photomask Technology + Extreme Ultraviolet Lithography, 2018, Monterey, California, United States

Abstract

For 1xnm node and beyond, even Extreme Ultraviolet Lithography (EUV) technology, the serious geometries distortions of the wafer patterns at new process are forcing chipmakers and foundries to utilize model-based SRAFs for ensuring the accuracy and manufacturability of the chips. Model-based Sub-Resolution Assistant Feature (SRAF) is based on inverse lithography (ILT), which is accurate but time-consuming. Therefore, it is necessary to extract the SRAF rules from model-based results and apply them to full chip layout. In this paper, we put forward a methodology of 2D SRAF rule extraction based on model-based results. We can describe and locate the SRAFs by introducing Projection Region, because it reflect the relationship between the SRAFs and main patterns. And the new concept Elongation can make the properties of SARFs more clearly. The experimental results show that the proposed method can extract the 2D SRAFs accurately and output the rules in a general format. The rule simplifying step can decrease the quantity of 2D SRAF rules through the identification and process of symmetry.

Citation Download Citation

Yaoxuan Dai, Xiaojing Su, Pengzheng Gao, Yayi Wei, Yanrong Wang, Jing Zhang, and Jiang Yan "2D SRAF rule extraction for fast application based on model-based results", Proc. SPIE 10810, Photomask Technology 2018, 108101E (3 October 2018); https://doi.org/10.1117/12.2501455

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