An optical power supply scheme for ultrahigh voltage grid with high reliability

Pu Wei; Shenting Lu; Hui Huang; Lu Deng; Jing Zhao

doi:10.1117/12.2502304

6 November 2018 An optical power supply scheme for ultrahigh voltage grid with high reliability

Pu Wei, Shenting Lu, Hui Huang, Lu Deng, Jing Zhao

Proceedings Volume 10812, Semiconductor Lasers and Applications VIII; 108121A (2018) https://doi.org/10.1117/12.2502304
Event: SPIE/COS Photonics Asia, 2018, Beijing, China

Abstract

The optical power supply technology has been presented several years and used in Electric current transformer (ECT). However, the reliability of the technology is proved to be low in actual application, which limit its widely used in electric power industry. In this paper, we propose a novel optical power supply system for Ultra-High Voltage (UHV) Grid, which utilizes 810-nm laser diode in low-voltage (LV) environment and GaAs photocell for power supply in highvoltage (HV) environment. A Lithium battery is further employed in HV environment which makes the power supply scheme more flexible and reliable. In addition, two VCSELs are also used for information transmission between the LV and the HV environment. And the parameters of the system, such as load power, laser driving current, laser temperature, semiconductor chilling plate driving current, ambient temperature and ambient humidity, are collected, transmitted via optical fiber and processed by the power management scheme. The scheme is able to dynamically control the output power of the laser diode according to the load power variance and make the Lithium battery working when the optical power supply is unavailable or burst heavy power supply demand is emerged. In this way, the output power variance of the laser can be kept as low as possible, which effectively increase the reliability of the system.

Citation Download Citation

Pu Wei, Shenting Lu, Hui Huang, Lu Deng, and Jing Zhao "An optical power supply scheme for ultrahigh voltage grid with high reliability", Proc. SPIE 10812, Semiconductor Lasers and Applications VIII, 108121A (6 November 2018); https://doi.org/10.1117/12.2502304

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