Highly photosensitive vertical photodetectors based on CsPbBr3 and PbS quantum dot layered heterojunction

Yu Yu; Yating Zhang D.D.S.; Lufan Jin; Zhiliang Chen; Yifan Li; Qingyan Li; Mingxuan Cao; Yongli Che; Jianquan Yao

doi:10.1117/12.2326283

Translator Disclaimer

5 November 2018 Highly photosensitive vertical photodetectors based on CsPbBr₃ and PbS quantum-dot-layered heterojunction

Yu Yu, Yating Zhang D.D.S., Lufan Jin, Zhiliang Chen, Yifan Li, Qingyan Li, Mingxuan Cao, Yongli Che, Jianquan Yao

Author Affiliations +

Proceedings Volume 10814, Optoelectronic Devices and Integration VII; 1081411 (2018) https://doi.org/10.1117/12.2326283
Event: SPIE/COS Photonics Asia, 2018, Beijing, China

Abstract

To overcome existing limitations in sensitivity and cost of state-of-the-art systems, new-style device structures and composite material systems are needed with low-cost fabrication and high performance. Vertical field effect photodetectors are fabricated with Au/Ag nanowires as the transparent source electrode and with vertically stacked layers of CsPbBr₃ and lead sulfide quantum dots, which formed heterojunctions. The built-in electric field in the layered heterojunction aids the separation of photoinduced excitons, while the short channel enables efficient carrier transport across the active region. Both of these benefits enable a high photo performance and fast photoresponse. This vertical phototransistors exhibit a wide response spectrum from 400 to 2100 nm, a high photoresponsivity of more than 9 × 10⁸ AW⁻¹, and a high detectivity of up to 2 × 10¹⁷ Jones (cm Hz^1/2 W⁻¹) under infrared illumination. Additionally, this vertical phototransistor had a response time of 3 μs. The solution –based fabrication process and excellent device performances strongly underscore vertical architecture combined with the layered heterojunction as a promising approach for future photodetection field.

Citation Download Citation

Yu Yu, Yating Zhang D.D.S., Lufan Jin, Zhiliang Chen, Yifan Li, Qingyan Li, Mingxuan Cao, Yongli Che, and Jianquan Yao "Highly photosensitive vertical photodetectors based on CsPbBr₃ and PbS quantum-dot-layered heterojunction", Proc. SPIE 10814, Optoelectronic Devices and Integration VII, 1081411 (5 November 2018); https://doi.org/10.1117/12.2326283

ACCESS THE FULL ARTICLE