Fabrication and performance of Ge-on-Si PIN photodetectors

Pei Guo; Xiuwei Yang; Huabing Xiang; Jianqiang He; Anbo Yuan; Pengfei Xiang; Renfang Lei; Naiman Liao; Ping Xiong; Renhao Li

doi:10.1117/12.2501106

5 November 2018 Fabrication and performance of Ge-on-Si PIN photodetectors

Pei Guo, Xiuwei Yang, Huabing Xiang, Jianqiang He, Anbo Yuan, Pengfei Xiang, Renfang Lei, Naiman Liao, Ping Xiong, Renhao Li

Author Affiliations +

Proceedings Volume 10814, Optoelectronic Devices and Integration VII; 108141C (2018) https://doi.org/10.1117/12.2501106
Event: SPIE/COS Photonics Asia, 2018, Beijing, China

Abstract

With the maturity of germanium (Ge) growth on Si, Ge photodetectors have drawn great interests worldwide, which are potentially used in NIR/MIR light detecting, optical telecommunications, single photon detecting, biosensor applications. Lateral and vertical structured Ge-on-Si PIN photodetectors were fabricated and investigated. A dark current density of 20.4 mA/cm² was obtained, and small size devices resulted in low dark current values. The responsivity as a function of the wavelength was tested, and the highest responsivity of 0.8 A/W at the wavelength of 1310nm was obtained in vertical structured photodetectors, while the lateral structured photodetectors had the best 3dB bandwidth of 0.5 GHz, which was evaluated from the response time of 0.7 ns. The quantum efficiency was ~76%, and the reason of low 3dB bandwidth was discussed.

Citation Download Citation

Pei Guo, Xiuwei Yang, Huabing Xiang, Jianqiang He, Anbo Yuan, Pengfei Xiang, Renfang Lei, Naiman Liao, Ping Xiong, and Renhao Li "Fabrication and performance of Ge-on-Si PIN photodetectors", Proc. SPIE 10814, Optoelectronic Devices and Integration VII, 108141C (5 November 2018); https://doi.org/10.1117/12.2501106

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