Translator Disclaimer
Paper
25 October 2018 Ultra-high efficiency III-V on Si MOS capacitor Mach-Zehnder modulator
Author Affiliations +
Abstract
High-capacity optical transmitters with reduced size, cost, and power consumption are required to meet growing bandwidth requirements of network systems. A high-modulation-efficiency Mach-Zehnder modulator (MZM) on an Si platform is a key piece of equipment for these transmitters. Si-MZMs have been widely reported; however their performance is limited by the material properties of Si. To overcome the performance limitations of Si MZMs, we have integrated III-V materials on Si substrate and developed a heterogeneously integrated III-V/Si metal oxide semiconductor (MOS) capacitor phase shifter for constructing ultra-high efficient MZM, in which the n-InGaAsP, p-Si, and SiO2 film are used for constructing the MOS capacitor. The fabricated MZM with the MOS capacitor exhibited a VπL of 0.09 Vcm and insertion loss of ~2 dB. 32-Gbps modulation of the MZM was also demonstrated.
© (2018) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
T. Aihara, T. Hiraki, K. Hasebe, T. Fujii, K. Takeda, T. Tsuchizawa, T. Kakitsuka, H. Fukuda, and S. Matsuo "Ultra-high efficiency III-V on Si MOS capacitor Mach-Zehnder modulator", Proc. SPIE 10823, Nanophotonics and Micro/Nano Optics IV, 1082309 (25 October 2018); https://doi.org/10.1117/12.2503433
PROCEEDINGS
6 PAGES


SHARE
Advertisement
Advertisement
RELATED CONTENT

Optical modulation using the silicon platform
Proceedings of SPIE (March 14 2013)
Thermo-optic phase modulators in SIMOX material
Proceedings of SPIE (March 24 2000)
Fast silicon optical modulator
Proceedings of SPIE (July 01 2004)
High speed silicon optical modulator
Proceedings of SPIE (February 16 2010)

Back to Top