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25 October 2018 56 Gbps Si/GeSi integrated EAM
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Abstract
The growing demand for fast, reliable and low power interconnect systems requires the development of efficient and scalable CMOS compatible photonic devices, in particular optical modulators. In this paper, we demonstrate an innovative electro absorption modulator (EAM) developed on an 800 nm SOI platform; the device is integrated in a rib waveguide with dimensions of a 1.5 μm x 40 μm, etched on a selectively grown GeSi cavity. High speed measurements at 1566 nm show an eye diagram with dynamic ER of 5.2 dB at 56 Gbps with a power consumption of 44 fJ/bit.
© (2018) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
L. Mastronardi, M. Banakar, A. Z. Khokhar, N. Hattasan, T. Rutirawut, T. Domínguez Bucio, K. M. Grabska, C. Littlejohns, A. Bazin, G. Mashanovich, and F. Y. Gardes "56 Gbps Si/GeSi integrated EAM", Proc. SPIE 10823, Nanophotonics and Micro/Nano Optics IV, 108230D (25 October 2018); https://doi.org/10.1117/12.2502709
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