You have requested a machine translation of selected content from our databases. This functionality is provided solely for your convenience and is in no way intended to replace human translation. Neither SPIE nor the owners and publishers of the content make, and they explicitly disclaim, any express or implied representations or warranties of any kind, including, without limitation, representations and warranties as to the functionality of the translation feature or the accuracy or completeness of the translations.
Translations are not retained in our system. Your use of this feature and the translations is subject to all use restrictions contained in the Terms and Conditions of Use of the SPIE website.
24 July 2018The study of nano-structure on in-situ UV laser irradiating GaAs(001) substrate
The AFM study of a series of novel nano-structure on in-situ laser irradiating GaAs(001) substrate in molecular beam epitaxy was presented. Nano-hole, nano-island and nano-ring(Chinese ancient copper coin shape) were observed after laser irradiating. The desorption of Gallium on GaAs surface varies according to different power energy and pulse numbers, leading to the formation of nano-holes, nano-islands and nano-rings. It is speculated that these nanostructures are galliumrich through the change of the RHEED stripe. What’s more, the desorption of defectless GaAs sub-monolayer was discovered, and matched dynamic evolution model (self-drilling effect dominated by Ga atom) was presented. The dependence of the temperature on the surface of the substrate with time was studied after laser irradiating according to the heat conduction equation. The drastic temperature changes caused non-thermodynamic equilibrium process which makes these morphologies.
The alert did not successfully save. Please try again later.
Changwei Deng, Linyun Yang, Lili Miao, Xinning Yang, Changsi Peng, "The study of nano-structure on in-situ UV laser irradiating GaAs(001) substrate," Proc. SPIE 10827, Sixth International Conference on Optical and Photonic Engineering (icOPEN 2018), 1082729 (24 July 2018); https://doi.org/10.1117/12.2500785