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24 July 2018 Surface modification on InAs wetting layer by in-situ pulsed laser and the effets on quantum dot growth
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Proceedings Volume 10827, Sixth International Conference on Optical and Photonic Engineering (icOPEN 2018); 108272A (2018) https://doi.org/10.1117/12.2501111
Event: Sixth International Conference on Optical and Photonic Engineering (icOPEN 2018), 2018, Shanghai, China
Abstract
In this work, surface modification of InAs wetting layer was carried out during InAs/GaAs (001) quantum dot molecular beam epitaxy growth by in-situ pulsed laser (355 nm/ 10 ns). We investigated the morphology transformation of wetting layer by atomic force microscope. Atomic layer removal and formation of nano holes were observed on the sample surface. It is proposed that the material removal of wetting layer induced by electronic excitation is triggered by In atom vacancies due to the desorption at substrate temperature of 480°C. The effects of surface modification on QD growth were studied by subsequent InAs deposition after laser irradiation. Preferential nucleation in nano holes were found in the experiments. This study provides a novel technique leading to site-controlled to InAs/GaAs (001) QDs fabrication.
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Chen Chen, Linyun Yang, Changwei Deng, Xinning Yang, Lili Miao, Zhenwu Shi, and Changsi Peng "Surface modification on InAs wetting layer by in-situ pulsed laser and the effets on quantum dot growth", Proc. SPIE 10827, Sixth International Conference on Optical and Photonic Engineering (icOPEN 2018), 108272A (24 July 2018); https://doi.org/10.1117/12.2501111
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