Paper
24 January 2019 Theoretical study of strained black phosphorus photodetector integrated with silicon waveguide
Siqing Zhang, Cizhe Fang, Yan Liu, Shao Yao, Genquan Han, Jincheng Zhang, Yue Hao
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Abstract
We compare optical characteristics of black phosphorus photodetectors integrated with a stripe waveguide and a ridge waveguide by optical field intensity and absorption spectrum, which proves that the stripe waveguide is better for enhancing the optical absorption of black phosphorus photodetector. The strain effect on the band structure of black phosphorus is investigated using the first-principles method based on density functional theory (DFT). The band structure of 5-layer BP experiences a direct-indirect-direct transition and a semiconductor-metal transition (SMT) when applied different strains. As a result, the cut-off wavelength and the responsivity of this strained BP photodetector can reach 3.76μm and 0.48 A/W respectively. In a word, the waveguide-integrated black phosphorus photodetector under strain for mid-infrared range may promote potential novel optoelectronic device applications based on two-dimensional materials in the future.
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Siqing Zhang, Cizhe Fang, Yan Liu, Shao Yao, Genquan Han, Jincheng Zhang, and Yue Hao "Theoretical study of strained black phosphorus photodetector integrated with silicon waveguide", Proc. SPIE 10840, 9th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Micro- and Nano-Optics, Catenary Optics, and Subwavelength Electromagnetics, 108400H (24 January 2019); https://doi.org/10.1117/12.2507388
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KEYWORDS
Phosphorus

Absorption

Photodetectors

Waveguides

Silicon

Graphene

Integrated optics

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