Translator Disclaimer
Paper
30 January 2019 Gas flow simulation research on reaction chamber of reactive ion etching
Author Affiliations +
Proceedings Volume 10841, 9th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Meta-Surface-Wave and Planar Optics; 108410G (2019) https://doi.org/10.1117/12.2512222
Event: Ninth International Symposium on Advanced Optical Manufacturing and Testing Technologies (AOMATT2018), 2018, Chengdu, China
Abstract
Gas flow distribution of reaction chamber of reactive ion etching (RIE) etcher is usually considered to be a main factor in determining both the plasma distribution and etching uniformity. Based on the continuum fluid and heat transfer models of the commercial software, Fluent(Ansys), the gas flow distribution of the reaction chamber was simulated. And then the spatial distribution profiles of the pressures above the electrode surface under the different mass flow (50~250sccm) inlet conditions , and the influence of the different GAP (L = 0.03~0.06m) of the chambers on the gas flow uniformity were discussed. The result shows that the pressure distribution above the electrode has the character which the pressure is higher in the center of the electrode and lower at the edge and increases with the rise of the mass flow of inlet. And the uniformity of the gas flow distribution is enhanced with the rise of the GAP of the chamber.
© (2019) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jingwen Zhang, Fan Bin, Zhiwei Li, Xin Liu, Bincheng Li, Han Yu, and Gong Chang "Gas flow simulation research on reaction chamber of reactive ion etching", Proc. SPIE 10841, 9th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Meta-Surface-Wave and Planar Optics, 108410G (30 January 2019); https://doi.org/10.1117/12.2512222
PROCEEDINGS
7 PAGES


SHARE
Advertisement
Advertisement
RELATED CONTENT

Plasma-Developable Electron-Beam Resists
Proceedings of SPIE (April 18 1985)
Wafer charging in different types of plasma etchers
Proceedings of SPIE (February 01 1992)
Reactive Ion Etching Of Silicon Dioxide
Proceedings of SPIE (September 17 1987)
Measurement of discharge impedance for dry etch process control
Proceedings of SPIE (September 16 1994)
Optical emission spectroscopy on the GEC reference cell
Proceedings of SPIE (February 15 1994)

Back to Top