Efficiency-improved silicon thermo-optic switches with deep trenches

Rui Zhu; Yun Lai; Xin Zhou; Xiangning Chen

doi:10.1117/12.2503636

12 December 2018 Efficiency-improved silicon thermo-optic switches with deep trenches

Rui Zhu, Yun Lai, Xin Zhou, Xiangning Chen

Proceedings Volume 10849, Fiber Optic Sensing and Optical Communication; 1084909 (2018) https://doi.org/10.1117/12.2503636
Event: International Symposium on Optoelectronic Technology and Application 2018, 2018, Beijing, China

Abstract

In this paper, two 2×2 Mach-Zehnder thermo-optic switches with and without two deep air trenches on both sides of the active arm are designed and fabricated on silicon-on-insulator(SOI) wafer. The experimental results show that switching powers of the two switches with and without trenches are 22.33 mW and 28.44 mW respectively when operated at 1560 nm wavelength. That is to say, the switching power of thermo-optic switch is reduced by 21.5 % due to the trenches. Moreover, the extinction ratios of the cross state are both over 32 dB.

Citation Download Citation

Rui Zhu, Yun Lai, Xin Zhou, and Xiangning Chen "Efficiency-improved silicon thermo-optic switches with deep trenches", Proc. SPIE 10849, Fiber Optic Sensing and Optical Communication, 1084909 (12 December 2018); https://doi.org/10.1117/12.2503636

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