Microstructure Fabrication with Implanted Etch Barriers

Tsing Chen

doi:10.1117/12.953164

25 July 1989 Microstructure Fabrication with Implanted Etch Barriers

Tsing Chen

Proceedings Volume 1088, Optical/Laser Microlithography II; (1989) https://doi.org/10.1117/12.953164
Event: 1989 Santa Clara Symposium on Microlithography, 1989, San Jose, CA, United States

Abstract

A novel etch masking process for orientation dependent chemical etching of silicon is presented. This process is based as well on the conversion of a surface relief pattern into a surface concentration pattern using ion implantation technique as on the differential etch rate of the heavily doped p+ silicon. The ion implantation process allows direct transfer of the photoresist pattern to the substrate. The improved etch control enables wet chemical etching of submicrometer structures. The different behaviour of the heavily doped p+ silicon versus various etchants renders possible to obtain patterned image reversal.

Citation Download Citation

Tsing Chen "Microstructure Fabrication with Implanted Etch Barriers", Proc. SPIE 1088, Optical/Laser Microlithography II, (25 July 1989); https://doi.org/10.1117/12.953164

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