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1 August 1989 E-Beam Application Of Highly Sensitive Positive And Negative-Tone Resists For X-Ray Mask Making
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Abstract
Resist sensitivity is one of the limiting factors in X-ray as well as e-beam lithography. To overcome the rather low sensitivities of commonly used resists like PMMA, a positive-tone X-ray resist ("RAY-PF") has been recently developed, which makes use of the concept of "chemical amplification". Since a novolak is included as a binder matrix, development can be performed by aqueous alkaline solutions, e.g. RAZ-Developer. Replacement of the dissolution inhibitor in RAY-PF by a chemical crosslinker yields a negative-tone resist ("RAY-PN") with very similar processing. The present investigation refers to the application of both resist types, originally designed to meet the demands of X-ray lithography, to high resolution e-beam lithography as applied for X-ray mask fabrication.
© (1989) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Siegfried Pongratz, Rita Demmeler, Christian Ehrlich, Klaus Kohlmann, Klaus Reimer, Ralph Dammel, Wolfgang Hessemer, Jurgen Lingnau, Ude Scheunemann, and Jurgen Theis "E-Beam Application Of Highly Sensitive Positive And Negative-Tone Resists For X-Ray Mask Making", Proc. SPIE 1089, Electron-Beam, X-Ray, and Ion-Beam Technology: Submicrometer Lithographies VIII, (1 August 1989); https://doi.org/10.1117/12.968538
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