E-Beam Application Of Highly Sensitive Positive And Negative-Tone Resists For X-Ray Mask Making

Siegfried Pongratz; Rita Demmeler; Christian Ehrlich; Klaus Kohlmann; Klaus Reimer; Ralph Dammel; Wolfgang Hessemer; Jurgen Lingnau; Ude Scheunemann; Jurgen Theis

doi:10.1117/12.968538

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1 August 1989 E-Beam Application Of Highly Sensitive Positive And Negative-Tone Resists For X-Ray Mask Making

Siegfried Pongratz, Rita Demmeler, Christian Ehrlich, Klaus Kohlmann, Klaus Reimer, Ralph Dammel, Wolfgang Hessemer, Jurgen Lingnau, Ude Scheunemann, Jurgen Theis

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Proceedings Volume 1089, Electron-Beam, X-Ray, and Ion-Beam Technology: Submicrometer Lithographies VIII; (1989) https://doi.org/10.1117/12.968538
Event: 1989 Santa Clara Symposium on Microlithography, 1989, San Jose, CA, United States

Abstract

Resist sensitivity is one of the limiting factors in X-ray as well as e-beam lithography. To overcome the rather low sensitivities of commonly used resists like PMMA, a positive-tone X-ray resist ("RAY-PF") has been recently developed, which makes use of the concept of "chemical amplification". Since a novolak is included as a binder matrix, development can be performed by aqueous alkaline solutions, e.g. ^RAZ-Developer. Replacement of the dissolution inhibitor in RAY-PF by a chemical crosslinker yields a negative-tone resist ("RAY-PN") with very similar processing. The present investigation refers to the application of both resist types, originally designed to meet the demands of X-ray lithography, to high resolution e-beam lithography as applied for X-ray mask fabrication.

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Siegfried Pongratz, Rita Demmeler, Christian Ehrlich, Klaus Kohlmann, Klaus Reimer, Ralph Dammel, Wolfgang Hessemer, Jurgen Lingnau, Ude Scheunemann, and Jurgen Theis "E-Beam Application Of Highly Sensitive Positive And Negative-Tone Resists For X-Ray Mask Making", Proc. SPIE 1089, Electron-Beam, X-Ray, and Ion-Beam Technology: Submicrometer Lithographies VIII, (1 August 1989); https://doi.org/10.1117/12.968538

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