GaAs FET Mushroom Gate Fabricated By FIB/EB Hybrid Lithography

K. Hosono; H. Morimoto; H. Minami; K. Nagahama; Y. Watakabe; T. Kato

doi:10.1117/12.968512

1 August 1989 GaAs FET Mushroom Gate Fabricated By FIB/EB Hybrid Lithography

K. Hosono, H. Morimoto, H. Minami, K. Nagahama, Y. Watakabe, T. Kato

Proceedings Volume 1089, Electron-Beam, X-Ray, and Ion-Beam Technology: Submicrometer Lithographies VIII; (1989) https://doi.org/10.1117/12.968512
Event: 1989 Santa Clara Symposium on Microlithography, 1989, San Jose, CA, United States

Abstract

A mushroom-gate structure for a high electron mobility transistor (HEMT) has been fabricated by a hybrid lithography process of focused ion beam (FIB) and shaped electron beam (EB). In this process, a resist in the gate region is reduced to about 0.2 μm by FIB lithography ("top gate" formation), and then the center of the top gate is exposed by the EB ("bottom gate" formation). Patterns of 0.20~0.25 pm were reproducibly delineated on the GaAs substrate by shaped EB. After recess etching and lift-off process, a 0.2 μm mushroom gate of HEMTs was obtained without substrate damage. The overlay accuracy for the FIB and EB exposure were both less than 0.2 μm.

Citation Download Citation

K. Hosono, H. Morimoto, H. Minami, K. Nagahama, Y. Watakabe, and T. Kato "GaAs FET Mushroom Gate Fabricated By FIB/EB Hybrid Lithography", Proc. SPIE 1089, Electron-Beam, X-Ray, and Ion-Beam Technology: Submicrometer Lithographies VIII, (1 August 1989); https://doi.org/10.1117/12.968512

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