Compact solid  state laser to generate 5 mJ at 532-nm

Bhabana Pati; James Burgess; Michael Rayno; Kenneth Stebbins

doi:10.1117/12.2507282

7 March 2019 Compact solid state laser to generate 5 mJ at 532-nm

Bhabana Pati, James Burgess, Michael Rayno, Kenneth Stebbins

Proceedings Volume 10896, Solid State Lasers XXVIII: Technology and Devices; 108960F (2019) https://doi.org/10.1117/12.2507282
Event: SPIE LASE, 2019, San Francisco, California, United States

Abstract

A compact and simple laser has been developed to generate 5 mJ of energy and < 7ns pulses at 532 nm. A pump cavity has been uniquely designed to directly couple diode light to the laser crystal, thereby eliminating the need for mounting the diodes on sub-mounts and using a fast-axis collimating lens. An Nd:YAG crystal is side pumped by diode bars and the laser components are designed in order to extract the largest fundamental mode for better beam quality. The laser is passively q-switched by a Cr:YAG crystal. A type II KTP crystal is used to generate 532-nm wavelength.

Conference Presentation

Citation Download Citation

Bhabana Pati, James Burgess, Michael Rayno, and Kenneth Stebbins "Compact solid state laser to generate 5 mJ at 532-nm", Proc. SPIE 10896, Solid State Lasers XXVIII: Technology and Devices, 108960F (7 March 2019); https://doi.org/10.1117/12.2507282

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