Laser induced crystal defects in monocrystalline silicon

T. Menold; F. Lanoy; M. Ametowobla; S. Hinderberger; K. Ohmer; J. R. Köhler; J. H. Werner

doi:10.1117/12.2508686

4 March 2019 Laser induced crystal defects in monocrystalline silicon

T. Menold, F. Lanoy, M. Ametowobla, S. Hinderberger, K. Ohmer , J. R. Köhler , J. H. Werner

Proceedings Volume 10905, Laser Applications in Microelectronic and Optoelectronic Manufacturing (LAMOM) XXIV; 109050X (2019) https://doi.org/10.1117/12.2508686
Event: SPIE LASE, 2019, San Francisco, California, United States

Abstract

We investigate the conditions for the formation of crystal defects leading to residual stress after spot laser melting of monocrystalline silicon with microsecond laser pulses. With the help of micro-Raman spectroscopy and Secco defect etching, we find a sharp transition from dislocation free to dislocation rich recrystallization corresponding to a threshold laser pulse energy E_p, for a given laser pulse length τ_p and focus diameter d^f. Besides the dependence of the threshold E_p on τ_p and d_f, our experiments show a strong dependence on the crystal orientation. The f100g-oriented substrates resist laser pulses with a two times higher laser pulse energy than the {111}- or {110}-oriented substrates. Using electron backscatter diffraction (EBSD), we find evidence for the formation of grain boundaries parallel to the appearance of pores within the melt pool. The pores most likely form when the oxygen solubility in the melt and the resolidified material decreases during cool down and the excess oxygen leaves, forming vapor pores. Avoiding oxygen uptake from the environment by processing under vacuum conditions at p = 1 mbar ambient pressure, prevents both, pores and grain boundaries.

Conference Presentation

Citation Download Citation

T. Menold, F. Lanoy, M. Ametowobla, S. Hinderberger, K. Ohmer , J. R. Köhler , and J. H. Werner "Laser induced crystal defects in monocrystalline silicon", Proc. SPIE 10905, Laser Applications in Microelectronic and Optoelectronic Manufacturing (LAMOM) XXIV, 109050X (4 March 2019); https://doi.org/10.1117/12.2508686

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