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4 March 2019 Characterization of MBE-grown 1.55-μm GaSb-based multiple-quantum-well lasers at cryogenic temperatures
Troy Hutchins-Delgado, Sami Adnan Nazib, Hosuk Lee, Diana Magana Contreras, Estania Jean Charles, Nathan J. Withers, Sadhvikas J. Addamane, Emma J. Renteria, John Nogan, Ganesh Balakrishnan, Marek Osiński
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Proceedings Volume 10912, Physics and Simulation of Optoelectronic Devices XXVII; 109120I (2019) https://doi.org/10.1117/12.2515649
Event: SPIE OPTO, 2019, San Francisco, California, United States
Abstract
GaSb-based multiple-quantum-well lasers with In0.2Ga0.8Sb wells, Al0.35Ga0.65Sb barriers, and Al0.9Ga0.1Sb claddings have been fabricated as broad-area Fabry-Perot devices of dimensions 1000 μm × 800 μm. Their current-voltage and light-current characteristics, as well as emission spectra have been measured over a wide temperature range from 280 K down to 20 K. These data have been analyzed for experimental information on carrier freeze out, gain changes related to temperature, temperature-dependence of series resistance, and prospects for high-performance lasers operating at cryogenic temperatures.
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Troy Hutchins-Delgado, Sami Adnan Nazib, Hosuk Lee, Diana Magana Contreras, Estania Jean Charles, Nathan J. Withers, Sadhvikas J. Addamane, Emma J. Renteria, John Nogan, Ganesh Balakrishnan, and Marek Osiński "Characterization of MBE-grown 1.55-μm GaSb-based multiple-quantum-well lasers at cryogenic temperatures", Proc. SPIE 10912, Physics and Simulation of Optoelectronic Devices XXVII, 109120I (4 March 2019); https://doi.org/10.1117/12.2515649
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KEYWORDS
Cryogenics
Temperature metrology
Cladding
Semiconductor lasers
Laser applications
Resistance
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