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1 March 2019 Highly sensitive terahertz-wave arrayed detector using InAs-HEMT on glass for video-imaging application
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This paper presents a newly developed square law detector array whose NEP is as low as ~ 1 pW/Hz0:5 for 1.0 THz waves. The detector array using high electron mobility transistor (HEMT) with InGaAs/InAs/InGaAs double hetero-structured channel has been fabricated. The InAs-HEMT was fabricated on a quartz substrate using the layer transfer technology. Also, an array of square law detectors was developed by applying advanced selective etching, atomic layer deposition, and metallization to the transferred hetero-structured layers. The static analysis revealed that the transistor shows electron mobility as high as 3,200 cm2/Vs and low leakage with subthreshold slope as low as ~ 100 mV/dec. Detection performance was characterized by directly inputting 1.0 THz waves thorough a THz probe to each of the arrayed detectors. It is also demonstrated that the detection characteristics were well described by the analytical formulae derived from the channel-carrier behavior model. The experimental results suggested that the developed detector array is a promising candidate for imaging application.
Conference Presentation
© (2019) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hiromu Kojima, Daishi Kido, Haruichi Kanaya, Hiroyuki Ishii, Tatsuro Maeda, Eiji Kume, Mutsuo Ogura, and Tanemasa Asano "Highly sensitive terahertz-wave arrayed detector using InAs-HEMT on glass for video-imaging application", Proc. SPIE 10917, Terahertz, RF, Millimeter, and Submillimeter-Wave Technology and Applications XII, 109170Y (1 March 2019);


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