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1 March 2019 III-nitride vertical resonant cavity light-emitting diodes with hybrid air-gap/AlGaN-dielectric distributed Bragg reflectors
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Abstract
We report III-N surface-emitting resonant-cavity light-emitting diodes (RCLEDs) at λ = 375 nm using a novel hybridmirror approach. The hybrid mirrors consist of 5 pairs of air-gap/AlGaN distributed Bragg reflector (DBR) at the bottom side of the vertical cavity and HfO2/SiO2 dielectric DBR (DDBR) on the top to facilitate the formation of a resonant cavity for nitride-based surface light emitting diodes. The air-gap/AlGaN DBR replaces the conventional thick stack of semiconductor DBR to achieve high reflectivity. Hybrid-mirror III-N RCLEDs with airgap/AlGaN DBR mirror were fabricated and the results showed that the III-N RCLEDs achieved high current density operation up to 40 kA/cm2 with a peak emission wavelength atλ = 375 nm and a full-width-half-maximum (FWHM) of 9.3 nm at room temperature.
Conference Presentation
© (2019) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jialin Wang, Chuan-Wei Tsou, Hoon Jeong, Young-Jae Park, Theeradetch Detchprohm, Karan Mehta, P. Douglas Yoder, Russell D. Dupuis, and Shyh-Chiang Shen "III-nitride vertical resonant cavity light-emitting diodes with hybrid air-gap/AlGaN-dielectric distributed Bragg reflectors", Proc. SPIE 10918, Gallium Nitride Materials and Devices XIV, 109180E (1 March 2019); https://doi.org/10.1117/12.2510860
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