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13 March 2019 Electron beam induced current investigation of Ga(In)N nanowires (Conference Presentation)
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Abstract
In-rich InGaN/GaN nanowires (NWs) are key optoelectronic materials, which can close the green gap of the light emitting diodes and can be used in efficient high-bandgap solar cells for integration in tandem devices. Realization of these devices requires as a first step the optimization of the NW structure and their electrical parameters. Electron Beam Induced Current (EBIC) microscopy is well suited to probe nanoscale devices with a high resolution and to extract the material parameters. Here, we analyze the electrical properties of axial GaN and InGaN/GaN n-p and p-n junction NWs using EBIC microscopy. III-N NWs were grown on Si(111) substrates by molecular beam epitaxy using Mg as a p-dopant and Si as an n-dopant. The growth conditions were adjusted to optimize the doping order with an abrupt axial junction without a parasitic radial overgrowth. From the EBIC analysis of the GaN p-n junctions, the doping level and the minorities carrier diffusion lengths were extracted. Next, a p-GaN/i-InGaN/n-GaN junction containing an In-rich InGaN segment [1] was grown yielding a flat and strong EBIC signal in the InGaN NW portion. NW arrays were then contacted and their behavior under visible light was analyzed. [1] Morassi et al., Cryst. Growth Des., 2545, 18 2018
Conference Presentation
© (2019) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Omar Saket, Fabien Bayle, François Julien, Martina Morassi, Nuno Amador, Jean-Christophe Harmand, Noelle Gogneau, and Maria Tchernycheva "Electron beam induced current investigation of Ga(In)N nanowires (Conference Presentation)", Proc. SPIE 10918, Gallium Nitride Materials and Devices XIV, 109180U (13 March 2019); https://doi.org/10.1117/12.2509370
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