Development of electron-selective SiO2/TiO2 stack layers with superior surface passivation capacity for n-type silicon substrates (Conference Presentation)

Hisham Nasser; Doguscan Ahiboz; Ezgi Aygun; Mona Zolfaghari Borra; Ozan Akdemir; Alpan Bek; Rasit Turan

doi:10.1117/12.2510433

8 March 2019 Development of electron-selective SiO₂/TiO₂ stack layers with superior surface passivation capacity for n-type silicon substrates (Conference Presentation)

Hisham Nasser, Doguscan Ahiboz, Ezgi Aygun, Mona Zolfaghari Borra, Ozan Akdemir, Alpan Bek, Rasit Turan

Author Affiliations +

Proceedings Volume 10919, Oxide-based Materials and Devices X; 1091928 (2019) https://doi.org/10.1117/12.2510433
Event: SPIE OPTO, 2019, San Francisco, California, United States

Abstract

In this work, the electron-carrier-selectivity of ALD deposited TiO2 contact on n-type and p-type c-Si wafers is presented. The optical, compositional, and diode quality dependence of TiO2 on the ALD deposition temperature were analyzed using spectroscopic ellipsometry, AFM, XPS, GI-XRD, and CV measurements. By optimizing the ALD process parameters, an impressive effective minority carrier lifetime of up to 2.3 milliseconds corresponding to an iVoc of ~700 mV was obtained from wet chemical oxide-SiO2/TiO2 passivation stack layers. Finally, the asymmetry in C-V and J-V measurements betweenTiO2/n-type and TiO2/p-type c-Si heterojunctions was examined and the electron transport selectivity of TiO2 was revealed.

Conference Presentation

Citation Download Citation

Hisham Nasser, Doguscan Ahiboz, Ezgi Aygun, Mona Zolfaghari Borra, Ozan Akdemir, Alpan Bek, and Rasit Turan "Development of electron-selective SiO₂/TiO₂ stack layers with superior surface passivation capacity for n-type silicon substrates (Conference Presentation)", Proc. SPIE 10919, Oxide-based Materials and Devices X, 1091928 (8 March 2019); https://doi.org/10.1117/12.2510433

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