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27 February 2019 Low-power four-wave mixing in graphene-on-SiN micro-ring resonator
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Proceedings Volume 10920, 2D Photonic Materials and Devices II; 109200J (2019) https://doi.org/10.1117/12.2510229
Event: SPIE OPTO, 2019, San Francisco, California, United States
Abstract
Graphene has emerged as an attractive nonlinear-optical material due to the high coefficient of two-photon absorption and four-wave mixing. Four-wave mixing in graphene has been previously studied in silicon-photonic platform. Enhancement of the four-wave mixing using optical cavities such as silicon micro-ring resonator (MRR) has been demonstrated. Recently, similar experiments have been extended to silicon-nitride (SiN) waveguides and micro-ring resonators. Electrostatic tuning of the four-wave mixing, and generation of frequency combs have been demonstrated using SiN MRRs having a Q-factor of 106 at input pump powers ≥ 1 W. On-chip pump powers of the order of 10 mW to 100 mW are desirable to obtain high conversion efficiency of the four- wave mixing. However, such high on-chip powers are challenging to handle in integrated-optic platforms. We report preliminary experimental result of four-wave mixing in graphene-on-SiN MRRs with CW pump power of 120 μW, which is coupled to the MRR. The MRR used has a modest Q-factor of the order of 103 after transferring graphene. We observe four-wave mixing even with a 50 % coverage of monolayer graphene on the MRR. Such low power level allows low-power on-chip nonlinear process. Furthermore, low photon count could be used for quantum photonic process and fundamental research where high conversion efficiency may not be necessary.
Conference Presentation
© (2019) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Aneesh Dash, Siddharth R. Nambiar, Mrityunjay Pandey, Srinivasan Raghavan, Akshay Naik, and Shankar Kumar Selvaraja "Low-power four-wave mixing in graphene-on-SiN micro-ring resonator ", Proc. SPIE 10920, 2D Photonic Materials and Devices II, 109200J (27 February 2019); https://doi.org/10.1117/12.2510229
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