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4 March 2019 Optical phase change materials in integrated silicon photonic devices (Conference Presentation)
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Abstract
Silicon photonics is considered to be the leading platform to achieve faster data transfer speeds on-chip. However, the weak electro-optic coefficient of silicon limits the maximum achievable single channel data rates. A hybrid solution consisting of a silicon photonic backbone and an incorporated optical phase change material that provides improved optical functionality may provide the solution for realizing broadband, low power, small footprint on-chip photonic devices capable of achieving record modulation speed. In this presentation, we discuss theoretical and experimental work integrating vanadium dioxide and GST in thermo-optic, electro-optic, and all-optical silicon photonic devices. Future directions will also be discussed.
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© (2019) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Sharon M. Weiss and Richard F. Haglund Jr. "Optical phase change materials in integrated silicon photonic devices (Conference Presentation)", Proc. SPIE 10922, Smart Photonic and Optoelectronic Integrated Circuits XXI, 109220K (4 March 2019); https://doi.org/10.1117/12.2508781
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