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4 March 2019 A novel 350nm CMOS optical receiver based on a current-assisted photodiode detector
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Proceedings Volume 10923, Silicon Photonics XIV; 109231I (2019)
Event: SPIE OPTO, 2019, San Francisco, California, United States
Integrating an optical receiver in CMOS optimized for near infrared light (NIR) remains appealing but at the same time challenging due to the deep photon penetration depth. A novel implementation of a light detector is demonstrated in a 350 nm CMOS technology, whereby, through adding a majority current with associated electric field distribution in the silicon detection volume, photo-generated minority electrons get quickly guided to the center of this volume. In the center, a tiny PN junction collects the photo-electrons. The detection speed subsequently increases, NIR light is received with improved responsivity and the detector capacitance gets drastically reduced to femtofarad level. The latter improvement also increases signal-to-noise performance and can be used to trade-off with other design parameters to improve global performance of the opto-electronic system. An optical datacom receiver at 1 Gbps is demonstrated at NIR-wavelength for proving useful Current-Assisted Photodiode detector operation in an actual CMOS system
© (2019) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Sven Boulanger, Hans Ingelberts, Thomas Van den Dries, Anas Gasser, and Maarten Kuijk "A novel 350nm CMOS optical receiver based on a current-assisted photodiode detector", Proc. SPIE 10923, Silicon Photonics XIV, 109231I (4 March 2019);


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