Broadband electro-optic modulator based on a phase-change material embedded in silicon photonic crystal slab waveguide

Rajib R. Ghosh; Priyanka Bhardwaj; Nitin Gupta; Senthil Subramanian; Anuj Dhawan

doi:10.1117/12.2511128

4 March 2019 Broadband electro-optic modulator based on a phase-change material embedded in silicon photonic crystal slab waveguide

Rajib R. Ghosh, Priyanka Bhardwaj, Nitin Gupta, Senthil Subramanian , Anuj Dhawan

Author Affiliations +

Proceedings Volume 10923, Silicon Photonics XIV; 109231V (2019) https://doi.org/10.1117/12.2511128
Event: SPIE OPTO, 2019, San Francisco, California, United States

Abstract

In this paper, we present a new design for an electro-optic modulator ⎯ operating at the telecomm wavelength of 1550 nm and having a very high extinction ratio ⎯ based on photonic crystal (PhC) slab waveguide and phase change material Germanium Selenide (GeSe) embedded in core silicon layer. The device is based on the shifting of the photonic bandgap of the PhC slab waveguide when the refractive index of the GeSe layer changes on application of electric field. Since GeSe changes from its phase crystalline to amorphous on application of an electric field, its refractive index also changes when this phase transition occurs. As a result of a large refractive index contrast between the two phases, the change in the effective refractive index in the PhC slab waveguide is also very high. With two self-sustainable states, the hybrid modulator shows broadband switching capability and an On/Off extinction ratio > 37 dB around a wavelength of 1550 nm.

Citation Download Citation

Rajib R. Ghosh, Priyanka Bhardwaj, Nitin Gupta, Senthil Subramanian , and Anuj Dhawan "Broadband electro-optic modulator based on a phase-change material embedded in silicon photonic crystal slab waveguide ", Proc. SPIE 10923, Silicon Photonics XIV, 109231V (4 March 2019); https://doi.org/10.1117/12.2511128

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