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Photonic Integrated Circuit (PIC) technology is becoming more and more mature and the three main platforms that offer Multi Project Wafer runs (Indium Phosphide (InP), Silicon on Insulator (SOI) and the silicon nitride based TriPleX platform) each have their own unique selling points. New disruptive PIC based modules are enabled by combinations of the different platforms complementing each other in performance. In particular the InP-TriPleX combination are two very complementary technologies. Combining them together yields for instance tunable ultra-narrow linewidth lasers extremely suitable for telecom and sensing applications. Also microwave photonics modules for Optical Beam Forming Networks and 5G communication can, and have been realized with this combination. Important part of this combination is the integration of the different platforms in modules via cost effective assembly techniques. This talk will present the combination of both technologies, the interconnection issues faced in the assembly process and latest measurement results on these hybrid integrated devices.
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A. Leinse, K. Wörhoff, I. Visscher, A. Alippi, C. Taddei, R. Dekker, D. Geskus, R. Oldenbeuving, D. H. Geuzebroek, C. G. H. Roeloffzen, "Hybrid interconnection of InP and TriPleX photonic integrated circuits for new module functionality," Proc. SPIE 10924, Optical Interconnects XIX, 109240B (19 April 2019); https://doi.org/10.1117/12.2513599