Paper
19 March 2019 Ultrafast graphene photonics for futuristic generation of datacoms
Author Affiliations +
Proceedings Volume 10924, Optical Interconnects XIX; 1092419 (2019) https://doi.org/10.1117/12.2509155
Event: SPIE OPTO, 2019, San Francisco, California, United States
Abstract
In a three-level system, actively detuning coupling strength between the respective waveguide modes via electrically gating the graphene double-layer allows ultra-fast switching of light propagating through the outer waveguides. In adiabatic elimination regime, the amplitude of the middle waveguide oscillates much faster in comparison to the outer waveguides leading to a vanishing field build up. As a result, the middle waveguide becomes a dark state and hence a low insertion-loss of 1 dB is obtained. Due to the direct dependency of applied voltage with respect to the absorption in graphene, sub-volt operation with modulation-depth of 5 dB is expected.
© (2019) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Elham Heidari, Zhizhen Ma, Hamed Dalir, Vahid Esfandyarpour, Volker J. Sorger, and Ray T. Chen "Ultrafast graphene photonics for futuristic generation of datacoms", Proc. SPIE 10924, Optical Interconnects XIX, 1092419 (19 March 2019); https://doi.org/10.1117/12.2509155
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KEYWORDS
Waveguides

Graphene

Silicon

Data communications

Light

Modulators

Photonics

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