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1 February 2019 High-performance extended SWIR photodetectors using strain compensated InGaAs/GaAsSb type-II quantum wells
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Abstract
We have successfully fabricated extended SWIR photodetectors with the cutoff wavelength of 2.5 μm by using InGaAs (-0.3 %)/GaAsSb(+0.3 %) strain compensated type-II quantum wells as an absorption layer. The 250-pair InGaAs/GaAsSb quantum wells were grown on an InP substrate by metal organic vapor phase epitaxy. The p-n junction was formed in the absorption layer by selective zinc diffusion. Dark current was low and showed diffusion current limited mode. Quantum efficiency in the wavelength region between 2.0 μm and 2.5 μm which corresponds to the type-II absorption became twice as high as that of the normal lattice-matched InGaAs/GaAsSb type-II quantum wells.
Conference Presentation
© (2019) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
K. Sugimura, Takashi Go, Takuma Fuyuki, Takahiko Kawahara, Hiroshi Inada, and Yasuhiro Iguchi "High-performance extended SWIR photodetectors using strain compensated InGaAs/GaAsSb type-II quantum wells", Proc. SPIE 10926, Quantum Sensing and Nano Electronics and Photonics XVI, 109260E (1 February 2019); https://doi.org/10.1117/12.2509148
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