GaN lasers for quantum technologies

S. P. Najda; P. Perlin; T. Suski; L. Marona; S. Stanczyk; P. Wisniewski; S. Grzanka; D. Schiavon; M. Leszczyński

doi:10.1117/12.2506257

1 February 2019 GaN lasers for quantum technologies

S. P. Najda, P. Perlin, T. Suski, L. Marona, S. Stanczyk, P. Wisniewski, S. Grzanka, D. Schiavon, M. Leszczyński

Proceedings Volume 10926, Quantum Sensing and Nano Electronics and Photonics XVI; 109260R (2019) https://doi.org/10.1117/12.2506257
Event: SPIE OPTO, 2019, San Francisco, California, United States

Abstract

Quantum technologies containing key GaN laser components will enable a new generation of precision sensors, optical atomic clocks and secure communication systems for many applications such as next generation navigation, gravity mapping and timing since the AlGaInN material system allows for laser diodes to be fabricated over a wide range of wavelengths from the u.v. to the visible. We report our latest results on a range of AlGaInN diode-lasers targeted to meet the linewidth, wavelength and power requirements suitable for optical clocks and cold-atom interferometry systems. This includes the [5s²S_1/2-5p²P_1/2] cooling transition in strontium⁺ ion optical clocks at 422 nm, the [5s₂¹S₀-5p¹P1] cooling transition in neutral strontium clocks at 461 nm and the [5s²s_1/2-6p²P_3/2] transition in rubidium at 420 nm. Several approaches are taken to achieve the required linewidth, wavelength and power, including an extended cavity laser diode (ECLD) system and an on-chip grating, distributed feedback (DFB) GaN laser diode.

Conference Presentation

Citation Download Citation

S. P. Najda, P. Perlin, T. Suski, L. Marona, S. Stanczyk, P. Wisniewski, S. Grzanka, D. Schiavon, and M. Leszczyński "GaN lasers for quantum technologies", Proc. SPIE 10926, Quantum Sensing and Nano Electronics and Photonics XVI, 109260R (1 February 2019); https://doi.org/10.1117/12.2506257

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