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8 March 2019 Characterizing hysteresis in 2D materials via heavy-tail switching transients in black phosphorous (Conference Presentation)
Matthew Grayson, Lintao Peng, Spencer Wells, Mark Hersam
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Proceedings Volume 10926, Quantum Sensing and Nano Electronics and Photonics XVI; 109262B (2019) https://doi.org/10.1117/12.2514105
Event: SPIE OPTO, 2019, San Francisco, California, United States
Abstract
In two-dimensional (2D) materials, such as black phosphorus, the hysteresis attributed to surface and interfacial disorder can severely limit applications in electronics. In this work, we characterize the hysteresis in Al2O3-encapsulated black phosphorous samples by studying conductivity switching transients in response to an applied step gate bias. Using the dispersive diffusion model for relaxation in disordered systems, the so-called bimolecular and unimolecular recombination limits were observed in low-disorder pristine and high-disorder oxidized BP samples, respectively. Two different heavy-tail lineshapes ( the algebraic decay and the stretched exponential relaxation ) were clearly distinguished in the low- and high-disorder limits, respectively. The parameterization of these transients allows temperature dependence of the line-fit parameters to be tracked. If interpreted under the continuous time random walk model, the observed temperature dependence of the dispersion parameter beta would result from a disorder-induced tail of localized trap states.
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Matthew Grayson, Lintao Peng, Spencer Wells, and Mark Hersam "Characterizing hysteresis in 2D materials via heavy-tail switching transients in black phosphorous (Conference Presentation)", Proc. SPIE 10926, Quantum Sensing and Nano Electronics and Photonics XVI, 109262B (8 March 2019); https://doi.org/10.1117/12.2514105
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KEYWORDS
Switching
Diffusion
Electronics
Phosphorus
Statistical modeling
Systems modeling
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