MBE-grown InGaAs/GaAs quantum-dots on Ge substrate: An idea towards optoelectronic integration on silicon

Raman Kumar; Ravinder Kumar; Debiprasad Panda; Jhuma Saha; Binita Tongbram; Debabrata Das; Sourabh Upadhyay; Arka Chatterjee; Samir Kumar Pal; Subhananda Chakrabarti

doi:10.1117/12.2508464

28 May 2019 MBE-grown InGaAs/GaAs quantum-dots on Ge substrate: An idea towards optoelectronic integration on silicon

Raman Kumar, Ravinder Kumar, Debiprasad Panda, Jhuma Saha, Binita Tongbram, Debabrata Das, Sourabh Upadhyay, Arka Chatterjee, Samir Kumar Pal, Subhananda Chakrabarti

Author Affiliations +

Proceedings Volume 10929, Quantum Dots and Nanostructures: Growth, Characterization, and Modeling XVI; 109290C (2019) https://doi.org/10.1117/12.2508464
Event: SPIE OPTO, 2019, San Francisco, California, United States

Abstract

We present a unique growth technique for molecular beam epitaxial growth of multi-layer InGaAs/GaAs quantum dots on Ge substrate. The optical and structural properties are compared with similar heterostructure grown on GaAs with the aim of achieving similar optical efficiency and structural homogeneity. An interesting phenomenon of increase in integrated photoluminescence (PL) intensity at high temperatures due to thermally assisted inter-dot carrier transfer is investigated using a coupled model and activation energy and quantum efficiency of dots is calculated for grown samples. The optical properties measured using steady state photoluminescence (PL) is found to quite similar to reference sample on GaAs substrate. Structural comparison performed using TEM shows good agreement between samples on Ge and GaAs substrate. H^- ion-implantation is done on as-grown samples which further enhances optical properties.

Conference Presentation

Citation Download Citation

Raman Kumar, Ravinder Kumar, Debiprasad Panda, Jhuma Saha, Binita Tongbram, Debabrata Das, Sourabh Upadhyay, Arka Chatterjee, Samir Kumar Pal, and Subhananda Chakrabarti "MBE-grown InGaAs/GaAs quantum-dots on Ge substrate: An idea towards optoelectronic integration on silicon", Proc. SPIE 10929, Quantum Dots and Nanostructures: Growth, Characterization, and Modeling XVI, 109290C (28 May 2019); https://doi.org/10.1117/12.2508464

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available