Analysis of strain relaxation and dark current minimization in In(Ga)As QDIP with In0.15Ga0.85As/GaAs capping

Ravinder Kumar; Debiprasad Panda; Debabrata Das; Vinayak Chavan; Raman Kumar; Subhananda Chakrabarti; Sreedhara Sheshadri

doi:10.1117/12.2508467

4 March 2019 Analysis of strain relaxation and dark current minimization in In(Ga)As QDIP with In_0.15Ga_0.85As/GaAs capping

Ravinder Kumar, Debiprasad Panda, Debabrata Das, Vinayak Chavan, Raman Kumar, Subhananda Chakrabarti, Sreedhara Sheshadri

Author Affiliations +

Proceedings Volume 10929, Quantum Dots and Nanostructures: Growth, Characterization, and Modeling XVI; 109290Z (2019) https://doi.org/10.1117/12.2508467
Event: SPIE OPTO, 2019, San Francisco, California, United States

Abstract

Quantum dot infrared photodetectors (QDIPs) with different dot materials have been investigated in this study to analyze the optical, structural and electrical behavior. The InAs and In_0.5Ga_0.5As QDIPs comprise ten vertically-stacked uncoupled quantum dot (QD) layers with In_0.15Ga_0.85As/GaAs capping, whereas the overgrowth percentage in both the dot materials has been kept similar (~59%). The InGaAs QDIP has a red shifted photoluminescence spectra compared to the InAs QDIP along with a lower full width at half maxima (FWHM) and higher activation energy. This attributes the formation of dots with larger size and higher vertical barrier potential in the InGaAs QDIP heterostructure. The lattice mismatch between the dot and its underlying/capping layer is less in the InGaAs QDs, which has been observed from the HRXRD rocking-curve analysis. The average strain obtained in the InGaAs QD is less compared to the InAs QD. Moreover, a reduced dark current density has been obtained in the InGaAs QDIP compared to the InAs QDIP at room temperature. Both the QDIPs have their spectral response in the mid-infrared range. However, the InGaAs QDIP has peaks with lower FWHM due to minimized dot size dispersion in the structure.

Citation Download Citation

Ravinder Kumar, Debiprasad Panda, Debabrata Das, Vinayak Chavan, Raman Kumar, Subhananda Chakrabarti, and Sreedhara Sheshadri "Analysis of strain relaxation and dark current minimization in In(Ga)As QDIP with In_0.15Ga_0.85As/GaAs capping", Proc. SPIE 10929, Quantum Dots and Nanostructures: Growth, Characterization, and Modeling XVI, 109290Z (4 March 2019); https://doi.org/10.1117/12.2508467

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members: $17.00

Non-members: $21.00 ADD TO CART

PROCEEDINGS
8 PAGES

DOWNLOAD PAPER SAVE TO MY LIBRARY

GET CITATION

RIGHTS & PERMISSIONS

Get copyright permission Get copyright permission on Copyright Marketplace

KEYWORDS

Indium gallium arsenide

Indium arsenide

Heterojunctions

Quantum dots

Gallium

Luminescence

Gallium arsenide

Show All Keywords

Keywords/Phrases

Search In:

Publication Years