Visible GaN laser diodes: from lowest thresholds to highest power levels

Harald König; Muhammad Ali; Werner Bergbauer; John Brückner; Georg Brüderl; Christoph Eichler; Sven Gerhard; Urs Heine; Alfred Lell; Lars Naehle; Matthias Peter; Jelena Ristic; Georg Rossbach; André Somers; Bernhard Stojetz; Soenke Tautz; Jan Wagner; Teresa Wurm; Uwe Strauss; Markus Baumann; Anne Balck; Volker Krause

doi:10.1117/12.2511976

14 March 2019 Visible GaN laser diodes: from lowest thresholds to highest power levels

Harald König, Muhammad Ali, Werner Bergbauer, John Brückner, Georg Brüderl, Christoph Eichler, Sven Gerhard, Urs Heine, Alfred Lell, Lars Naehle, Matthias Peter, Jelena Ristic, Georg Rossbach, André Somers, Bernhard Stojetz, Soenke Tautz, Jan Wagner, Teresa Wurm, Uwe Strauss, Markus Baumann, Anne Balck, Volker Krause

Author Affiliations +

Proceedings Volume 10939, Novel In-Plane Semiconductor Lasers XVIII; 109390C (2019) https://doi.org/10.1117/12.2511976
Event: SPIE OPTO, 2019, San Francisco, California, United States

Abstract

More and more applications are using GaN laser diodes. Visible blue laser devices are well established light sources for converter based business projection of several thousand Lumens. Additional laser-based concepts like near-to-eye projection push device requirements above heretofore limits. In 2017, threshold currents of 10 and 20mA were reported for single mode blue and green laser, respectively. We will present a drastic reduction of laser threshold of green R&D laser samples by more than a factor of 2 down to 10mA. We also will discuss turn-on delay as a limiting factor for modulation speed and spatial resolution of flying spot projection.

On the other side, new applications may occur in the near future. We will present research data on blue laser bars as a possible component for industrial applications like for materials processing. LIV characteristics are measured up to power levels of 107W. We observe power conversion efficiencies of 44% at 60W output power for our best samples.

Citation Download Citation

Harald König, Muhammad Ali, Werner Bergbauer, John Brückner, Georg Brüderl, Christoph Eichler, Sven Gerhard, Urs Heine, Alfred Lell, Lars Naehle, Matthias Peter, Jelena Ristic, Georg Rossbach, André Somers, Bernhard Stojetz, Soenke Tautz, Jan Wagner, Teresa Wurm, Uwe Strauss, Markus Baumann, Anne Balck, and Volker Krause "Visible GaN laser diodes: from lowest thresholds to highest power levels", Proc. SPIE 10939, Novel In-Plane Semiconductor Lasers XVIII, 109390C (14 March 2019); https://doi.org/10.1117/12.2511976

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available